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K4H560838E-TCLB0 - DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP    DDR SDRAM 256Mb E-die (x4, x8)

K4H560838E-TCLB0_480031.PDF Datasheet

 
Part No. K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/LAA K4H560838E-TC/LB3 K4H560438E-TC/LB3 K4H560438E-TC/LB0 K4H560438E-TC/LA2 K4H560438E-TC/LAA K4H560838E K4H560438E-TLAA K4H560838E-TCAA K4H560838E-TLAA K4H560438E-TCAA K4H560438E-TCB3 K4H560438E-TLB3
Description DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
   DDR SDRAM 256Mb E-die (x4, x8)

File Size 216.51K  /  24 Page  

Maker


Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.



Homepage http://www.samsung.com/Products/Semiconductor/
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 Full text search : DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP    DDR SDRAM 256Mb E-die (x4, x8)


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Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
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